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Typical Characteristics T C = 25°C unless otherwise noted
400
100
10 μ s
200
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100 μ s
OPERATION IN THIS
STARTING T J = 25 o C
10
AREA MAY BE
LIMITED BY r DS(ON)
1ms
1
10ms
STARTING T J = 150 o C
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
10
1
10
100
200
0.01
0.1
1
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
150
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
150
V GS = 6V
V GS = 10V
120
90
60
V DD = 15V
T J = 175 o C
120
90
60
V GS = 5.5V
V GS = 5V
T J = 25 o C
30
T J = -55 o C
30
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
0
3.0
3.5
4.0 4.5 5.0 5.5
6.0
0
1 2
3
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
10
9
8
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 6V
2.5
2.0
1.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 10V
7
6
1.0
0.5
V GS = 10V, I D =80A
0
2 0
40
6 2
80
-80
-40
0 40 80 120
160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 200 4 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C 5
4
www.fairchildsemi.com
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